sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:SCT012H90G3AG
Data Manual:SCT012H90G3AG.pdf
Brand:ST
Particular Year:23+
Package:H2PAK-7
Delivery Date:New original
Stock: 3000pcs
The SCT012H90G3AG is a 900V, 110A SiC power MOSFET device developed using advanced innovative third generation SiC MOSFET technology from stmicroelectronics. The device features very low RDS(on) across the entire temperature range, combined with low capacitance and very high switching operation, resulting in improved application performance in terms of frequency, energy efficiency, system size and weight reduction.
Device model: SCT012H90G3AG
Technology: SiCFET (silicon carbide)
Voltage: 900V
Current: 110A
Mounting type: surface mount type
Package: H²PAK-7
Features
• Passed AEC-Q101 certification
• Very low RDS(on) across the entire temperature range
• High speed switching performance
• Very fast and robust inner body diode
• Source sensing pins for improved efficiency
Applications
• Main inverter (electric traction)
• DC/DC converters for EV/HEV
• Car Charger (OBC)
Model
Brand
Package
Quantity
Describe
INFINEON
TO-247-4
3000
1200V, 60mΩ, CoolSiC™ Silicon Carbide MOSFET Transistor, TO-247-4
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The STMicroelectronics (ST) Group was established in 1987 by the merger of Italys SGS Microelectronics and Frances Thomson Semiconductor. In May 1998, SGS-THOMSON Microelectronics changed the company name to STMicroelectronics Limited. STMicroelectron…
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