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Trade Name:SCTWA70N120G2V
Data Manual:
SCTWA70N120G2V.pdf
Brand:ST
Particular Year:23+
Package:HIP247
Delivery Date:New original
Stock: 3000pcs
The SCTWA70N120G2V is a 1200V, 91A SiC power MOSFET device developed using advanced innovative 2nd generation SiC MOSFET technology from stmicroelectronics. The device has very low on-off resistance per unit area and very good switching performance. Switching loss is almost independent of junction temperature.
Device model: SCTWA70N120G2V
Technology: silicon carbide power MOSFET
Voltage: 1200V
Current: 91A
Installation type: Through hole
Packaged by HIP247
Features
• Very fast and robust inner body diode
• Very low grid charge and input capacitance
• Very high working junction temperature capacity (TJ = 200°C)
Applications
• Switch mode power supply
•DC-DC converter
• Industrial motor control
Model
Brand
Package
Quantity
Describe
INFINEON
TO-247-4
3000
1200V, 60mΩ, CoolSiC™ Silicon Carbide MOSFET Transistor, TO-247-4
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The STMicroelectronics (ST) Group was established in 1987 by the merger of Italys SGS Microelectronics and Frances Thomson Semiconductor. In May 1998, SGS-THOMSON Microelectronics changed the company name to STMicroelectronics Limited. STMicroelectron…
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