sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:SCT040W120G3AG
Data Manual:SCT040W120G3AG.pdf
Brand:ST
Particular Year:23+
Package:HIP247
Delivery Date:New original
Stock: 3000pcs
The SCT040W120G3AG SiC power MOSFET device is developed using advanced innovative third generation SiC MOSFET technology from stmicroelectronics. The device features very low RDS(on) across the entire temperature range, combined with low capacitance and very high switching operation, resulting in improved application performance in terms of frequency, energy efficiency, system size and weight reduction.
Device model: SCT040W120G3AG
Technology: silicon carbide power MOSFET
Voltage: 1200 V
Current: 40 A
Installation type: Through hole
Packaged by HIP247
Features
• Passed AEC-Q101 certification
• Very low RDS(on) across the entire temperature range
• High speed switching performance
• Very fast and robust inner body diode
• Very high working junction temperature capacity (TJ = 200°C)
Applications
• Main inverter (electric traction)
• DC/DC converters for EV/HEV
• Car Charger (OBC)
Model
Brand
Package
Quantity
Describe
INFINEON
PG-HDSOP-22
2000
CoolSiC™ Automotive MOSFET 750 V G2 in Q-DPAK top-side cooled package, 16 mΩ
INFINEON
PG-HDSOP-22
2000
CoolSiC™ Automotive MOSFET 750 V G2 in Q-DPAK top-side cooled package, 25 mΩ
INFINEON
PG-HDSOP-22
2000
CoolSiC™ Automotive MOSFET 750 V G2 in Q-DPAK top-side cooled package, 60 mΩ
INFINEON
TO-247-4
3000
1200V, 60mΩ, CoolSiC™ Silicon Carbide MOSFET Transistor, TO-247-4
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