sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IKW75N60H3
Data Manual:IKW75N60H3.pdf
Brand:INFINEON
Particular Year:23+
Package:TO-247-3
Delivery Date:New and Original
Stock: 1200pcs
IKW75N60H3 - 600V IGBT Transistors with anti-parallel diode in TO-247 package
Product Description
IKW75N60H3 - High speed 600 V, 75 A hard-switching TRENCHSTOP™ IGBT3 co-packed with free-wheeling diode in a TO-247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.
Summary of Features
Low switching losses for high efficiency
Excellent VCE(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology
Fast switching behavior with low EMI emissions
Optimized diode for target applications, meaning further improvement in switching losses
Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
Short circuit capability 5µs
Offering Tj(max) of 175°C
Packaged with and without freewheeling diode for increased design freedom
Potential Applications
Uninterruptible Power Supplies (UPS)
Industrial Heating and Welding
Solutions for Solar Energy Systems
Model
Brand
Package
Quantity
Describe
ST
D2PAK-3
5000
Insulated Gate Bipolar Transistors (IGBTs) 20 A - 600 V - short circuit rugged IGBTs
INFINEON
PG-TO220-3
5000
600 V, 15 A IGBT with anti-parallel diode in TO-220 Full-Pak package
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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