sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:AFGHL40T65SQD
Data Manual:AFGHL40T65SQD.PDF
Brand:ON
Particular Year:23+
Package:TO-247-3
Delivery Date:New and Original
Stock: 1155pcs
The AFGHL40T65SQD features the new Field Resistance Generation 4 high-speed IGBT technology. The AEC Q101 certified AFGHL40T65SQD provides optimum performance for both hard-switched topologies and soft-switched topologies in automotive applications.
Product attributes
IGBT Type: Trench type field cut-off
Voltage - Collector Breakdown (max): 650 V
Current - Collector (Ic) (max): 80 A
Current - collector pulse (Icm): 160 A
Vce(on) at different Vge, Ic (max): 2.1V @ 15V, 40A
Power - max. value: 238 W
Switching energy: 250µJ (on), 90µJ (off)
Input type: Standard
Gate charge: 68 nC
Td (on/off) value at 25°C: 15ns/70ns
Test conditions: 400V, 20A, 6 ohms, 15V
Reverse recovery time (trr): 28 ns
Operating temperature: -55°C ~ 175°C (TJ)
Mounting type: Through-hole
Package / Housing: TO-247-3
Supplier Device Package: TO-247-3
Basic part number: AFGHL40
Typical Applications
- Automotive HEV-EV on-board chargers
- Automotive HEV-EV DC-DC converters
- Totem pole bridgeless PFC
- PTC
Model
Brand
Package
Quantity
Describe
ST
D2PAK-3
5000
Insulated Gate Bipolar Transistors (IGBTs) 20 A - 600 V - short circuit rugged IGBTs
INFINEON
PG-TO220-3
5000
600 V, 15 A IGBT with anti-parallel diode in TO-220 Full-Pak package
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