sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:AFGHL40T65RQDN
Data Manual:AFGHL40T65RQDN.PDF
Brand:ON
Particular Year:23+
Package:TO-247-3
Delivery Date:New and Original
Stock: 1000pcs
AFGHL40T65RQDN onsemi's new family of FS4 IGBTs features a new field-resistive IGBT technology that provides optimal performance for automotive applications. This technology is short-circuit rated and offers a high quality factor and low conduction and switching losses.
Product attributes
IGBT Type: Field cut-off
Voltage - Collector Breakdown (max): 650 V
Current - Collector (Ic) (max.): 46 A
Current - collector pulse (Icm): 160 A
Vce(on) at different Vge, Ic (max): 1.82V @ 15V, 40A
Power - max. value: 288 W
Switching energy: 1.14 mJ (on), 740 µJ (off)
Input type: Standard
Gate charge: 47 nC
Td (on/off) values at 25°C: 26ns/77ns
Test conditions: 400V, 40A, 2.5 ohms, 15V
Reverse recovery time (trr): 44 ns
Operating temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package/Case: TO-247-3
Supplier Device Package: TO-247-3
Basic part number: AFGHL40
Typical applications
-E-compressors for HEVs/EVs, PTC heaters for HEVs/EVs
Model
Brand
Package
Quantity
Describe
ST
D2PAK
5000
Trench gate field-stop 650 V, 30 A low-loss M series IGBT in a D²PAK package
IXYS
TO-220-3
5000
650V, Auroral Transmission IGBT Transistor for 20-60kHz Switching, TO-220-3
IXYS
TO-247-3
5000
900V, 165A, High Speed IGBT Transistor for 20-50 kHz Switching, TO-247-3
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