sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:DF100R07W1H5FPB53
Data Manual:DF100R07W1H5FPB53.pdf
Brand:INFINEON
Particular Year:23+
Package:Module
Delivery Date:New and Original
Stock: 1000pcs
The DF100R07W1H5FPB53 is a high speed device designed for ultimate efficiency for applications with switching rates greater than 30kHz. This high speed 5 IGBT features TRENCHSTOP™ 5 technology with an integrated RAPID 1 fast flexible reverse parallel diode.H5 IGBTs offer best-in-class efficiency in hard switching and resonant topologies and are a plug-and-play replacement for previous generation IGBTs. Typical applications include UPS, welding converters, solar array inverters and medium to high frequency switching inverters.
Product Attributes
IGBT type: Trench field cut-off
Configuration: 2 independent
Voltage - Collector Breakdown (max): 650 V
Current - Collector (Ic) (max): 40 A
Power - Max: 20 mW
Vce(on) (max) at varying Vge, Ic: 1.55V @ 15V, 25A
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) at varying Vce: 2.8 nF @ 25 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package/Housing: Module
Supplier Device Package: Module
Applications
● UPS
● Welding converters
● Solar array inverters
● Medium and high frequency switching inverters
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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