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Model
Brand
Parameter Description
MOQ
Stock
Purchase Quantity
Unit Price
Operation
Product Description:1200 V, 60 A ultrafast high voltage diode
Package:DO-247Product Description:650V 50A Field Stop Trench IGBT
Package:TO-247-3Product Description:N-channel 600 V, 7 A ultra-fast IGBT
Package:TO-252-3Product Description:Bipolar (BJT) transistor - Single NPN 60 V 3 A 60 MHZ 1 W through hole TO-126-3
Package:TO-126-3Product Description:100 V, 40 A dual-channel power Schottky rectifier
Package:D2PAKProduct Description:IGBT Transistor 650 V 78 A 300 W Surface Mount TO-263 (D2PAK)
Package:D2PAKProduct Description:IGBT Transistor 560 V 80 A 300 W Surface mount TO-263 (D2PAK)
Package:D2PAKProduct Description:P-channel power MOSFET, -30 V, -88.6A, 7.5 mΩ, µ8FL
Package:8-WDFNProduct Description:P-channel power MOSFET, -40 V, -222 A, 2.2 mΩ, DFN5
Package:DFN5Product Description:P-channel power MOSFET, -30 V, -234 A, 1.8 mΩ, SO8-FL
Package:SO-8FLProduct Description:PIN diode .33pF -40°C to +150°C Threshold level +9 dBm
Package:QFN-3Product Description:PIN diode .45pF -40°C to +150°C Threshold level +12 dBm
Package:QFN-3Product Description:PIN diode .3pF -40°C to +150°C Threshold level +10 dBm
Package:QFN-3Product Description:N-channel 60 V, 1.2 mΩ typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package
Package:PowerFLAT 5x6Product Description:40A, 30V, N-channel synchronous buck NexFET™ power MOSFET power module in a 5mm x 6mm SON package
Package:SON-8Product Description:650 V, 30 A silicon power diode
Package:TO-220-2Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
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