sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide (SiC) JFET
Brand:ON
Particular Year:25+
Package:TO-247-4L
Delivery Date:New and original
Stock: 2500pcs
The UJ4N075005K4S device is a silicon carbide (SiC) JFET transistor launched by (onsemi), belonging TO the EliteSiC series. It adopts the TO-247-4L package and is mainly applied in scenarios with high thermal constraint requirements such as solid-state circuit breakers and relays.
Main specifications
FET type: N-channel
Technology: SiCFET (Silicon carbide)
Drain-source voltage (Vdss) : 750 V
Current at 25°C - continuous drain (Id) : 120A (Tc)
Drive voltage (maximum Rds On, minimum Rds On) : 0V, 2V
On-resistance (maximum value) at different ids and Vgs: 4.8 milliohms @ 80A, 2V
Vgs(th) (maximum value) at different ids: 3.7V @ 180mA
Gate charge (Qg) at different Vgs (maximum value) : 400 nC @ 18 V
Vgs (maximum value) : +3V, -30V
Input capacitance (Ciss) at different Vds (maximum value) : 3028 PPF @ 400 V
FET function: -
Power dissipation (maximum) : 714W (Tc)
Operating temperature: -55°C to 175°C (TJ)
Installation type: Through hole
Encapsulation: TO-247-4
Typical applications
The UJ4N075005K4S transistor is suitable for scenarios such as solid-state circuit protection, battery management systems, and high-power switches, especially for industrial-grade applications that require rapid switching and high-temperature environments.
Model
Brand
Package
Quantity
Describe
ON
TO-247-4L
3000
Silicon Carbide (SiC) Combo JFET - EliteSiC, 5.3 mohm, 750V, TO-247-4L
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