sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide (SiC) JFET
Brand:ON
Particular Year:25+
Package:TOLL
Delivery Date:New and original
Stock: 3000pcs
The UJ4N075004L8S is onsemi's 750V 4mΩ Silicon carbide (SiC) junction field effect transistor (JFET) in TOLL package, designed for circuit protection applications, especially for demanding scenarios such as solid-state circuit breakers (SSCBS). This transistor has the following core parameters:
FET type: N-channel
Technology: SiCFET (Silicon carbide)
Drain-source voltage (Vdss) : 750 V
Current at 25°C - continuous drain (Id) : 120A (Tc)
Drive voltage (maximum Rds On, minimum Rds On) : 0V, 2V
On-resistance (maximum value) at different ids and Vgs: 4.3 milliohms @ 80A, 2V
Vgs(th) (maximum value) at different ids: 3.7V @ 180mA
Gate charge (Qg) at different Vgs (maximum value) : 400 nC @ 18 V
Vgs (maximum value) : +3V, -30V
Input capacitance (Ciss) at different Vds (maximum value) : 3028 PPF @ 400 V
FET function: -
Power dissipation (maximum) : 1153W (Tc)
Operating temperature: -55°C to 175°C (TJ)
Installation type: Surface mount type
Encapsulation: TOLL
Typical applications
UJ4N075004L8S is mainly used in circuit protection scenarios that require high reliability and high integration, such as solid-state circuit breakers, relays, battery disconnection devices, and surge protection.
Model
Brand
Package
Quantity
Describe
ON
TO-247-4L
3000
Silicon Carbide (SiC) Combo JFET - EliteSiC, 5.3 mohm, 750V, TO-247-4L
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ON Semiconductor (Nasdaq: ON) is the premier supplier of high-performance silicon solutions for energy-efficient electronics. The companys product portfolio includes power and signal management, logic, discrete and custom devices to help customers sol…
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