sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel Power MOSFET
Brand:INFINEON
Particular Year:25+
Package:PG-TDSON-8
Delivery Date:New and Original
Stock: 5000pcs
ISC037N12NM6 is a standard-grade 120 V MOSFET transistor in a SuperSO8 package, featuring an on-resistance of 3.7 mOhm. The ISC037N12NM6 forms part of Infineon's OptiMOS™ 6 power MOSFET series.
ISC037N12NM6 Product Attributes:
Series: OptiMOS™ 6
FET Type: N-channel
Technology: MOSFET (Metal Oxide Semiconductor)
Drain-Source Voltage (Vdss): 120 V
Continuous Drain Current at 25°C (Id): 19.2A (Ta), 163A (Tc)
Drive Voltage (Maximum Rds On, Minimum Rds On): 8V, 10V
On-Resistance at Different Id, Vgs (Maximum): 3.7 mΩ @ 50A, 10V
Vgs(th) at different Id (Max): 3.6V @ 111µA
Gate charge (Qg) at different Vgs (Max): 58 nC @ 10 V
Vgs (Max): ±20V
Input capacitance (Ciss) at different Vds (Max): 4300 pF @ 60 V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Operating Temperature: -55°C to 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8 FL
Package/Case: 8-PowerTDFN
ISC037N12NM6 Product Features:
Characteristics: RDS(on) improved by 58%
FOMg improved by up to 66%
Qrr improved by up to 90%
FOMoss improved by up to 35%
Extremely low on-resistance
Extremely low reverse recovery charge
Excellent gate charge x RDS(on)
High avalanche energy rating
175°C junction temperature rating
Model
Brand
Package
Quantity
Describe
INFINEON
PG-TDSON-8
5000
120V, OptiMOS™ 6 N-channel power MOSFET transistor, PG-TDSON-8
INFINEON
PG-TO263-3
5000
100V, StrongIRFET™ 2 single N-channel power MOSFET transistor, PG-TO263-3
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