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ISC032N12LM6 (N-channel power MOSFET): 120V, OptiMOS™ 6 power MOSFET transistor in SuperSO8 package.

Product Details:

Model: ISC032N12LM6

Package: PG-TDSON-8

Type: N-channel power MOSFET transistor

Description: ISC032N12LM6 is a logic-level 120 V MOSFET in a SuperSO8 package with an on-resistance of 3.2 mOhm. ISC032N12LM6 is part of the Infineon OptiMOS™ 6 power MOSFET series.

ISC032N12LM6 Specifications:

Product Type: MOSFET

Technology: Si

Mounting Style: SMD/SMT

Package/Case: TDSON-8

Transistor Polarity: N-Channel

Number of Channels: 1 Channel

Vds - Drain-Source Breakdown Voltage: 120 V

Id - Continuous Drain Current:    170 A    

Rds On - Drain On-Resistance:    9 mOhms    

Vgs - Gate-Source Voltage:    -20 V, +20 V    

Vgs th - Gate-Source Threshold Voltage:    1.7 V

Qg - Gate Charge:    33 nC    

Minimum Operating Temperature:    -55 °C

Maximum Operating Temperature:    +175 °C

Pd - Power Dissipation:    211 W    

Channel Mode:    Enhancement    

Product Type:    MOSFETs

Transistor type:    1 N-Channel    

Typical turn-off delay time:    29.6 ns    

Typical turn-on delay time:    9.3 ns

ISC032N12LM6 Product Features:

Compared to OptiMOS™, this technology offers the following characteristics:

RDS(on) improved by up to 40%

FOMg

Qrr improved by up to 50%

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