sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:AIGB30N65F5ATMA1
Data Manual:AIGB30N65F5ATMA1.pdf
Brand:INFINEON
Particular Year:23+
Package:TO-263-3
Delivery Date:New and Original
Stock: 1000pcs
AIGB30N65F5ATMA1 TRENCHSTOP™ 5 F5 discrete IGBTs are optimised for switching >60kHz to provide the best efficiency and bridge the gap between MOSFETs and IGBTs. The F5 series significantly reduces switching losses compared to current leading solutions. The target topologies are the boost stage, PFC (AC-DC) stage and high-voltage DC-DC topologies commonly found in applications such as uninterruptible power supplies (UPS), inverter welders and switching mode power supplies (SMPS). The 650V Trenchstop™ 5 F5 igbt with silicon carbide diode is designed for low inductance and offers 1% higher efficiency than the 650V Trenchstop™ 5 H5 series. the F5 product requires more design effort, but the payoff is also higher.
Features and Benefits:
High-speed F5 technology offers:
-Highest efficiency topology in both hard switched and resonant topologies.
-650V breakdown voltage - low gate charge QG
-Maximum junction temperature of 175°C
-Passes dynamic voltage withstand test
-AEC-Q101 certified
-Green packaging (RoHS compliant)
Applications
-Off-board chargers
-On-board chargers
-DC/DC converters
-Power factor correction
Model
Brand
Package
Quantity
Describe
ROHM
TO-247GE
1500
Insulated gate bipolar transistor (IGBT) 5μs Short-Circuit Tolerance, 650V 30A, FRD Built in, TO-247GE
Microchip
TO-264-3
1500
Insulated Gate Bipolar Transistor (IGBT) PT MOS 8 Combi 900 V 80 A TO-264
Microchip
TO-264-3
1500
Insulated gate bipolar transistor (IGBT) Fieldstop Low Frequency Combi 600 V 75 A TO 264
Microchip
TO-247-3
1500
Insulated gate bipolar transistor (IGBT) Fieldstop Low Frequency Combi 600 V 50 A TO-247
Microchip
TO-247-3
2000
Insulated Gate Bipolar Transistor (IGBT) PT MOS 7 Single 1200 V 35 A TO-247
Microchip
TO-264-3
1500
Insulated gate bipolar transistor (IGBT) Fieldstop Low Frequency Combi 1200 V 35 A TO 264 MAX
Microchip
TO-264-3
1500
Insulated gate bipolar transistor (IGBT) Fieldstop Low Frequency Combi 600 V 100 A TO 264
Microchip
TO-247-3
1500
Insulated Gate Bipolar Transistor (IGBT) IGBT Fieldstop Low Frequency Combi 600 V 50 A TO-247
Microchip
TO-247-3
1500
Insulated Gate Bipolar Transistor (IGBT) FG, IGBT-CombI, 600V, TO-264 MAX, RoHS
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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