sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IKB15N60TATMA1
Data Manual:IKB15N60TATMA1.pdf
Brand:INFINEON
Particular Year:23+
Package:TO-263-3
Delivery Date:New and Original
Stock: 1000pcs
IKB15N60TATMA1 600 V, 15 A hard-switching TRENCHSTOP™ third-generation IGBTs are co-packaged with fully rated continuity diodes in a TO263 D2Pak package, combining trench gate and field termination concepts to significantly improve the static and dynamic performance of the device.The IGBTs are combined with soft-recovery emitter-control diodes to further minimise turn-on losses. Switching and conduction losses are optimised for maximum efficiency.
Characterisation
Extremely low VCEsat drop for reduced conduction losses
Low switching losses
Positive temperature coefficient of VCEsat for easy parallel switching capability
Very soft, fast recovery anti-parallel emitter control diodes
High robustness and temperature stability
Low EMI emissions
Low gate charge
Very compact parameter distribution
IKB15N60TATMA1 Product Attributes
IGBT Type: Trench Field Cutoff
Voltage - Collector Breakdown (max): 600 V
Current - Collector (Ic) (max): 30 A
Current - Collector pulse (Icm): 45 A
Vce(on) (max) at varying Vge, Ic: 2.05V @ 15V, 15A
Power - Max: 130 W
Switching Energy: 570µJ
Input Type: Standard
Gate Charge: 87 nC
Td (On/Off) Value at 25°C: 17ns/188ns
Test Conditions: 400V, 15A, 15 Ohms, 15V
Reverse Recovery Time (trr): 34 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package/Housing: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Model
Brand
Package
Quantity
Describe
ROHM
TO-247GE
1500
Insulated gate bipolar transistor (IGBT) 5μs Short-Circuit Tolerance, 650V 30A, FRD Built in, TO-247GE
Microchip
TO-264-3
1500
Insulated Gate Bipolar Transistor (IGBT) PT MOS 8 Combi 900 V 80 A TO-264
Microchip
TO-264-3
1500
Insulated gate bipolar transistor (IGBT) Fieldstop Low Frequency Combi 600 V 75 A TO 264
Microchip
TO-247-3
1500
Insulated gate bipolar transistor (IGBT) Fieldstop Low Frequency Combi 600 V 50 A TO-247
Microchip
TO-247-3
2000
Insulated Gate Bipolar Transistor (IGBT) PT MOS 7 Single 1200 V 35 A TO-247
Microchip
TO-264-3
1500
Insulated gate bipolar transistor (IGBT) Fieldstop Low Frequency Combi 1200 V 35 A TO 264 MAX
Microchip
TO-264-3
1500
Insulated gate bipolar transistor (IGBT) Fieldstop Low Frequency Combi 600 V 100 A TO 264
Microchip
TO-247-3
1500
Insulated Gate Bipolar Transistor (IGBT) IGBT Fieldstop Low Frequency Combi 600 V 50 A TO-247
Microchip
TO-247-3
1500
Insulated Gate Bipolar Transistor (IGBT) FG, IGBT-CombI, 600V, TO-264 MAX, RoHS
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