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The IGB08N120S7 is A 1200 V, 8 A hard-switching TRENCHSTOP™ IGBT7 S7 single-transistor device in TO-263 package with a low saturation voltage drop VCEsat TO achieve ultra-low conduction losses in target applications. Its features and technical specifications are as follows:

Feature description

VCE = 1200 V

IC = 8 A

Low saturation pressure drop VCEsat = 2 V (Tvj = 150°C)

High short-circuit resistance capability (8 µs)

Wide controllable range of dv/dt

Technical Specification

IGBT type: -

Voltage - Emitter breakdown (maximum value) : 1200 V

Current - Collector (Ic) (maximum value) : 9 A

Current-collector pulse (Icm) : 9 A

Vce(on) (maximum value) at different Vge and Ic: 2V @ 15V, 3A

Power - Maximum: 37 W

Switching energy: 210µJ (on), 160µJ (off)

Input type: Standard

Gate charge: 24 nC

Td (on/off) value at 25°C: 19ns/89ns

Test conditions: 600V, 3A, 60 ohms, 15V

Operating temperature: -40°C to 150°C (TJ)

Installation type: Surface mount type

Packaging/Shell: TO-263-3

In addition, the IGB08N120S7 device is suitable for a variety of industrial applications, including:

Industrial drive ‌ : Ideal as a high-voltage auxiliary power supply

Auxiliary industrial facilities ‌ : provide reliable power supply

Industrial SMPS (Switching power supply) ‌ : for efficient power conversion ‌

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