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The IGB03N120S7 insulated gate bipolar transistor (IGBT) features a low saturation voltage drop VCEsat, enabling ultra-low conduction loss in target applications. This device has the following advantages and technical specifications:

The advantages of IGB03N120S7

Compact design for high-voltage auxiliary power supplies

Reduce electromagnetic interference

Technical Specification

IGBT type: -

Voltage - Emitter breakdown (maximum value) : 1200 V

Current - Collector (Ic) (maximum value) : 9 A

Current-collector pulse (Icm) : 9 A

Vce(on) (maximum value) at different Vge and Ic: 2V @ 15V, 3A

Power - Maximum: 37 W

Switching energy: 210µJ (on), 160µJ (off)

Input type: Standard

Gate charge: 24 nC

Td (on/off) value at 25°C: 19ns/89ns

Test conditions: 600V, 3A, 60 ohms, 15V

Operating temperature: -40°C to 150°C (TJ)

Installation type: Surface mount type

Packaging/Shell: TO-263-3

The IGB03N120S7 is applicable to fields such as industrial motor drive and control. Its high short-circuit resistance and low electromagnetic interference characteristics make it outstanding in industrial drives ‌.

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