sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IGBT Single Tube
Brand:INFINEON
Particular Year:25+
Package:TO-247-3
Delivery Date:New and original
Stock: 2000pcs
The IHW20N135R5 is a 1350 V IGBT monolithic anti-pass diode in a TO247 package with the following key parameters:
IGBT type: -
Voltage - Emitter breakdown (maximum value) : 1350 V
Current - Collector (Ic) (maximum value) : 40 A
Current-collector pulse (Icm) : 60 A
Vce(on) (maximum value) at different Vge and Ic: 1.85V @ 15V, 20A
Power - Maximum: 288 W
Switching energy: 950µJ (off)
Input type: Standard
Gate charge: 170 nC
Td (on/off) value at 25°C: -/235ns
Test conditions: 600V, 20A, 10 ohms, 15V
Operating temperature: -40°C to 175°C (TJ)
Installation type: Through hole
Packaging/Shell: TO-247-3
In addition, IHW20N135R5 also has the following advantages:
Increase in switching frequency
Reduce power loss
Better thermal management can enhance reliability
Lower EMI filtering requirements
Reduce system costs
The highest reliability for peak current
The IHW20N135R5 IGBT is particularly suitable for induction cooking applications, such as induction cooking stoves and inverter microwave ovens. Due to its monolithic integrated reverse conducting diode, it is highly suitable for soft-switching applications and also for designs that require hard-switching functionality.
Model
Brand
Package
Quantity
Describe
INFINEON
TO-247-3
2000
Insulated gate bipolar transistor (IGBT) channel 650 V 120 A 395 W through-hole TO-247-3
INFINEON
TO-252-3
2000
1200 V, 8 A hard-switching TRENCHSTOP™ IGBT7 S7 single-tube device
INFINEON
TO-263-3
2000
1200 V, 15 A hard-switching TRENCHSTOP™ IGBT7 S7 single-tube device
INFINEON
TO-263-3
2000
1200 V, 8 A hard-switching TRENCHSTOP™ IGBT7 S7 single-tube device
INFINEON
TO-263-3
2000
1200 V, 3 A hard-switching TRENCHSTOP™ IGBT7 S7 single-tube device
IXYS
TO-247AD
2000
Insulated gate bipolar transistor (IGBT) PT 600 V 66 A 190 W Through-hole TO-247AD
IXYS
TO-264-3
2000
Insulated gate bipolar Transistor (IGBT) PT 600 V 200 A 695 W Through-hole TO-264
IXYS
TO-264-3
2000
Insulated Gate bipolar Transistor (IGBT) XPT Gen4 1200V 85A TO-264
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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