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Product Classification

AI Processor Chip

AI Accelerators

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Commodity Model:IHW20N135R5

Trade Name:IGBT Single Tube

Brand:INFINEON

Particular Year:25+

Package:TO-247-3

Delivery Date:New and original

Stock: 2000pcs

Quantity:
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Product Parameters

Manufacturer
INFINEON
Model
IHW20N135R5
Package
TO-247-3
Describe
A 1350 V IGBT monolithic integrated reverse conduction diode in TO247 package

Product Description

The IHW20N135R5 is a 1350 V IGBT monolithic anti-pass diode in a TO247 package with the following key parameters:

IGBT type: -

Voltage - Emitter breakdown (maximum value) : 1350 V

Current - Collector (Ic) (maximum value) : 40 A

Current-collector pulse (Icm) : 60 A

Vce(on) (maximum value) at different Vge and Ic: 1.85V @ 15V, 20A

Power - Maximum: 288 W

Switching energy: 950µJ (off)

Input type: Standard

Gate charge: 170 nC

Td (on/off) value at 25°C: -/235ns

Test conditions: 600V, 20A, 10 ohms, 15V

Operating temperature: -40°C to 175°C (TJ)

Installation type: Through hole

Packaging/Shell: TO-247-3


In addition, IHW20N135R5 also has the following advantages:

Increase in switching frequency

Reduce power loss

Better thermal management can enhance reliability

Lower EMI filtering requirements

Reduce system costs

The highest reliability for peak current


The IHW20N135R5 IGBT is particularly suitable for induction cooking applications, such as induction cooking stoves and inverter microwave ovens. Due to its monolithic integrated reverse conducting diode, it is highly suitable for soft-switching applications and also for designs that require hard-switching functionality.


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Describe

IGW75N65H5

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TO-247-3

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Insulated gate bipolar transistor (IGBT) channel 650 V 120 A 395 W through-hole TO-247-3

IGD08N120S7

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TO-252-3

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TO-263-3

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1200 V, 15 A hard-switching TRENCHSTOP™ IGBT7 S7 single-tube device

IGB08N120S7

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TO-263-3

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1200 V, 8 A hard-switching TRENCHSTOP™ IGBT7 S7 single-tube device

IGB03N120S7

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TO-263-3

2000

1200 V, 3 A hard-switching TRENCHSTOP™ IGBT7 S7 single-tube device

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TO-247-3

2000

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IXGH28N60B3D1

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TO-247AD

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Insulated gate bipolar transistor (IGBT) PT 600 V 66 A 190 W Through-hole TO-247AD

IXXK100N60B3H1

IXYS

TO-264-3

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Insulated gate bipolar Transistor (IGBT) PT 600 V 200 A 695 W Through-hole TO-264

IXYK85N120C4H1

IXYS

TO-264-3

2000

Insulated Gate bipolar Transistor (IGBT) XPT Gen4 1200V 85A TO-264

IXYH40N120B4H1

IXYS

TO-247-3

2000

Insulated gate bipolar transistor (IGBT) XPT Gen4 1200V 40A TO247

FAQ

  • 1.Is the inventory and price seen on the platform accurate?

    A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.

  • 2.Are all our products genuine?

    A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.

  • 3.Can you provide the qualification certificate of the original factory or agent?

    A: at present, our self-employed brands TI,ST,ADI,NXP,LATTICE,CYPRESS,INFINEON,XILINX and other first-line brands. Other channels are the original factory and agency channels. If necessary, we can communicate and confirm according to the specific brand and model.

  • 4.Can I make an inquiry through the company's website?

    A: You can inquire through the website, or by phone and email.

  • 5.When can I deliver the goods after placing an order? How long will it take to get there?

    A: the delivery date is marked in most commodity information. You can estimate the delivery time of the commodity according to the delivery date. The specific arrival time depends on the warehouse where the commodity is located and the logistics mode you choose.

  • 6.Can the company issue an invoice?

    A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.

INFINEON

INFINEON

Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…

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