sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide MOSFET Transistors
Brand:INFINEON
Particular Year:25+
Package:TO-247-3
Delivery Date:New and Original
Stock: 2000pcs
IMW65R007M2H CoolSiC™ MOSFET 650 V, 7 mΩ G2 in a TO-247 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.
Features Of IMW65R007M2H
Excellent figures of merit (FOMs)
Single-digit RDS(on) in TO-247
Best in class RDS(on)
High robustness and overall quality
Support for unipolar driving (Vgsoff=0)
Best immunity against turn-on effects
Improved package interconnect with .XT
Benefits Of IMW65R007M2H
Enables BOM savings
Maximizes the system performance per $
Highest reliability
Enables top efficiency and power density
Ease-of-use
Full compatibility with existing vendors
Allows designs without fan or heatsink
Model
Brand
Package
Quantity
Describe
ON
TO-247-4
3000
1700V, 45A, 53mohm, Silicon Carbide (SiC) MOSFET Transistor, TO-247-4
ON
TO-247-4
3000
Silicon Carbide (SiC) MOSFET – EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L
ST
HiP247-3
3000
1200 V Automotive grade Silicon Carbide Power MOSFET, 27 Mω, 56 A, HiP247
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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