sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide MOSFET Single Transistor
Brand:INFINEON
Particular Year:25+
Package:PG-HSOF-8
Delivery Date:New and original
Stock: 2000pcs
IMT65R010M2H is the second generation (G2) CoolSiC™ MOSFET from Infineon Technologies in TOLL package with a rated voltage of 650V and on-resistance of 10mΩ. The product significantly reduces thermal resistance through improved thermal cycling and.XT interconnect technology, making it suitable to fully utilize the advantages of silicon carbide materials in efficient, compact systems .
IMT65R010M2H Specifications
Package/housing: HSOF-8
Transistor polarity: N-Channel
Number of channels: 1 Channel
Vds- drain-source breakdown voltage: 650 V
Id- Continuous drain current: 168 A
Rds On- drain-source on-resistance: 13.1 mOhms
Vgs - grid - source voltage: -7V, + 23V
Vgs TH-gate source threshold voltage: 4.5V
Qg- Grid charge: 113 nC
Operating temperature: -55 °C to + 175°C
Pd-power dissipation: 681 W
Channel mode: Enhancement
Brand name: CoolSiC
Trademark: Infineon Technologies
Configuration: Single
Drop time: 9.4ns
Rise time: 24 ns
Series: 650V G2
Transistor type: 1 N-Channel
Type: SiC MOSFET
Typical shutdown delay: 30 ns
Typical connection delay: 16 ns
Model
Brand
Package
Quantity
Describe
INFINEON
TO-247-4
3000
1200V, 60mΩ, CoolSiC™ Silicon Carbide MOSFET Transistor, TO-247-4
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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