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Service Telephone:86-755-83294757
Trade Name:Silicon Carbide MOSFET Single Transistor
Brand:INFINEON
Particular Year:25+
Package:PG-HDSOP-22
Delivery Date:New and original
Stock: 2000pcs
IMDQ65R007M2H is a CoolSiC™ 650 V G2 silicon carbide MOSFET manufactured by Infineon Corporation. By reducing energy consumption, IMDQ65R007M2H gives full play to the performance of silicon carbide, thus achieving a more efficient power conversion. The CoolSiC 650 V G2 MOSFET is used in a wide range of power semiconductor applications, including photovoltaic power generation, energy storage, DC charging for electric vehicles, motor drives, and industrial power systems.
IMDQ65R007M2H Product attribute
Transistor polarity: N-Channel
Number of channels: 1 Channel
Vds- drain-source breakdown voltage: 650 V
Id- Continuous drain current: 196 A
Rds On- drain-source on-resistance: 8.5 mOhms
Vgs - grid - source voltage: -7 V, + 23 V
Vgs TH-gate source threshold voltage: 5.6V
Qg- Grid charge: 179 nC
Minimum operating temperature: -55 C
Max. operating temperature: + 175 C
Pd- Power dissipation: 937 W
Channel mode: Enhancement
Configuration: Single
Descent time: 20 ns
Humidity sensitivity: Yes
Package/housing: HDSOP-22
Product: SiC MOSFETS
Product type: SiC MOSFETS
Rise time: 41 ns
Transistor type: 1 N-Channel
Typical shutdown delay: 53 ns
Typical connection delay: 22 ns
Model
Brand
Package
Quantity
Describe
INFINEON
TO-247-4
3000
1200V, 60mΩ, CoolSiC™ Silicon Carbide MOSFET Transistor, TO-247-4
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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