sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide MOSFET Single Transistor
Brand:INFINEON
Particular Year:25+
Package:PG-HDSOP-22
Delivery Date:New and original
Stock: 2000pcs
The IMDQ65R020M2H is a 650V CoolSiC™ MOSFET in Q-DPAK package with top-side cooling . The IMDQ65R020M2H utilizes top-side cooling technology to provide excellent heat dissipation performance, helping to reduce system temperature and improve system stability and reliability .
The IMDQ65R020M2H is suitable for a variety of power electronics applications, including but not limited to:
High efficiency power converter
Industrial automation equipment
Charging facilities for electric vehicles and new energy vehicles
Solar and wind inverter systems
IMDQ65R020M2H Technical specifications
Transistor polarity: N-Channel
Number of channels: 1 Channel
Vds- drain-source breakdown voltage: 650 V
Id- Continuous drain current: 97 A
Rds On- drain-source on-resistance: 24 mOhms
Vgs - grid - source voltage: -7 V, + 23 V
Vgs TH-gate source threshold voltage: 5.6V
Qg- Grid charge: 57 nC
Operating temperature: -55 °C to + 175°C
Pd-power dissipation: 394 W
Channel mode: Enhancement
Configuration: Single
Descent time: 5.6ns
Humidity sensitivity: Yes
Package/housing: HDSOP-22
Product: SiC MOSFETS
Product type: SiC MOSFETS
Rise time: 12 ns
Transistor type: 1 N-Channel
Typical shutdown delay: 19 ns
Typical connection delay: 10.3ns
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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