sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel Power MOSFET
Brand:ON
Particular Year:25+
Package:TCPAK57
Delivery Date:New and original
Stock: 3000pcs
NVMJST1D4N06CLTXG Automotive power MOSFET with TCPAK57 package, compact and efficient design, with high heat dissipation performance. Aec-q101-certified MOSFETs and PPaps are suitable for automotive applications that require higher board-level reliability.
Basic parameter
Vds- drain-source breakdown voltage: 60 V
Id- Continuous drain current: 198 A
Rds On- drain-source on-resistance: 1.49 mOhms
Vgs - grid - source voltage: -20 V, + 20 V
Vgs TH-gate source threshold voltage: 2 V
Qg- Grid charge: 92.2 nC
Minimum operating temperature: -55 °C to + 175°C
Pd- Power dissipation: 113 W
Encapsulation: TCPAK57
Features
• Small size (5x7 mm), compact design
• Low RDS (on) minimizes on-off losses
• Low QG and capacitance to minimize drive losses
• TCPAK57 Top Cool package
• Complies with AEC-Q101 and supports PPAP
• These devices are lead free and RoHS compliant
Model
Brand
Package
Quantity
Describe
INFINEON
PG‑TO263‑3
1000
OptiMOS™ 6 power MOSFET 150 V normal level in D²PAK 3-pin package
INFINEON
TDSON-8
26800
OptiMOS™ 5 Power MOSFETs Extend Temperature Range for Improved Ruggedness
INFINEON
PQFN-8
5000
150V Single N-Channel StrongIRFET™ Power MOSFET in a PQFN 5x6 package
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