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NTH4L025N065SC1 650V Silicon Carbide MOSFET in TO-247-4L package. The device has 10 times the dielectric breakdown field strength and 2 times the electron saturation speed. ON Silicon Carbide MOSFETs include AEC-Q101 compliant PPAP capabilities and are specifically designed for automotive applications and meet their associated requirements.

Product Specifications:

FET type: N channel

Technology: SiCFET (Silicon carbide)

Drain-source voltage (Vdss) : 650 V

Current at 25°C - Continuous Drain (Id) : 99A (Tc)

Driving voltage (Max Rds On, min Rds On) : 15V, 18V

On-resistance (Max.) at different ids and Vgs: 28.5 milliohm @ 45A, 18V

Vgs(th) (Max.) for different ids: 4.3V@15.5mA

Gate charge (Qg) at different Vgs (Max.) : 164 NC-@18 V

Vgs (Max) : +22V, -8V

Input capacitance (Ciss) at different Vds (Max.) : 3480 PF-@15 V

FET function: -

Power dissipation (Max.) : 348W (Tc)

Operating temperature: -55°C ~ 175°C (TJ)

Installation type: Through hole

Supplier device package: TO-247-4L

Package/housing: TO-247-4

• 1.Is the inventory and price seen on the platform accurate?

  A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.

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  A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.

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  A: at present, our self-employed brands TI，ST，ADI，NXP，LATTICE，CYPRESS，INFINEON，XILINX and other first-line brands. Other channels are the original factory and agency channels. If necessary, we can communicate and confirm according to the specific brand and model.

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• 6.Can the company issue an invoice?

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