Welcome Here  Shenzhen Mingjiada Electronics Co., Ltd.

The NTH4L075N065SC1 (SiC) MOSFETs are available in a TO-247-4L package for fast and robust design. The device has 10 times the dielectric breakdown field strength and 2 times the electron saturation speed, and also has 3 times the energy band gap and 3 times the thermal conductivity.

Product Specifications:

FET type: N channel

Technology: SiCFET (Silicon carbide)

Drain-source voltage (Vdss) : 650 V

Current at 25°C - Continuous Drain (Id) : 38A (Tc)

Driving voltage (Max Rds On, min Rds On) : 15V, 18V

On-resistance (Max.) at different ids and Vgs: 85 milliohm @ 15A, 18V

Vgs(th) (Max.) : 4.3V@5mA for different ids

Gate charge (Qg) at different Vgs (Max.) : 61 NC-@18 V

Vgs (Max) : +22V, -8V

Input capacitance (Ciss) at different Vds (Max.) : 1196 PF-@325 V

FET function: -

Power dissipation (Max.) : 148W (Tc)

Operating temperature: -55°C ~ 175°C (TJ)

Installation type: Through hole

Supplier device package: TO-247-4L

Package/housing: TO-247-4

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