sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:NTBG014N120M3P
Data Manual:NTBG014N120M3P.pdf
Brand:ON
Particular Year:23+
Package:D2PAK-7
Delivery Date:New original
Stock: 5000pcs
The NTBG014N120M3P Silicon Carbide (SiC) MOSFET is part of the 1200V M3P flat SiC MOSFET family. ON MOSFET optimized for power applications. The planar technology works reliably when the grid is at a negative grid voltage drive and turn-off peak. The series performs best when using an 18V gate drive, but can also be used with a 15V gate drive.
Product Specifications:
FET type: N channel
Technology: SiCFET (Silicon carbide)
Drain-source voltage (Vdss) : 1200 V
Current at 25°C - Continuous Drain (Id) : 104A (Tc)
Driving voltage (Max Rds On, min Rds On) : 15V, 18V
On-resistance (Max.) at different ids and Vgs: 20 milliohm @ 74A, 18V
Vgs(th) (Max.) : 4.63V@37mA for different ids
Gate charge (Qg) at different Vgs (Max.) : 337 N@18 V
Vgs (Max) : +22V, -10V
Input capacitance (Ciss) for different Vds (Max.) : 6313 PF-@800 V
FET function: -
Power dissipation (Max.) : 454W (Tc)
Operating temperature: -55°C ~ 175°C (TJ)
Mounting type: Surface mount type
Supplier device package: D2PAK-7
Package/housing: TO-263-8, D²Pak (7 leads + connectors), TO-263CA
Model
Brand
Package
Quantity
Describe
ON
D2PAK-7
2000
Silicon carbide (SiC) MOSFET - EliteSiC, 53 mohm, 1700 V, M1, D2PAK-7L
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