sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:SCT055HU65G3AG
Data Manual:SCT055HU65G3AG.pdf
Brand:ST
Particular Year:23+
Package:HU3PAK
Delivery Date:New original
Stock: 3000pcs
The SCT055HU65G3AG 650V 30A Automotive grade Silicon Carbide power MOSFET is developed using ST's advanced innovative 2nd / 3rd generation silicon carbide MOSFET technology. The device has low on-resistance per unit area and good switching performance. Applications include main inverters (electric traction), DC/DC converters for EV/HEV, and on-board chargers (OBCs).
Product Specifications:
FET type: N channel
Technology: SiCFET (Silicon carbide)
Drain-source voltage (Vdss) : 650 V
Current at 25°C - Continuous drain (Id) : 30A (Tc)
Driving voltage (Max Rds On, min Rds On) : 15V, 18V
On-resistance (Max.) at different ids and Vgs: 72 milliohm @ 15A, 18V
Vgs(th) (Max.) : 4.2V@1mA for different ids
Gate charge (Qg) at different Vgs (Max.) : 29 NC-@18 V
Vgs (Max) : +22V, -10V
Input capacitance (Ciss) at different Vds (Max.) : 721 PF-@400 V
FET function: -
Power dissipation (Max.) : 185W (Tc)
Operating temperature: -55°C ~ 175°C (TJ)
Mounting type: Surface mount type
Supplier device package: HU3PAK
Package/housing: TO-263-8, D²Pak (7 leads + connectors), TO-263CA
Basic product number: SCT055
Model
Brand
Package
Quantity
Describe
ON
TO-247-3
3000
650V, 25mohm, N-Channel - EliteSiC, Silicon Carbide (SiC) MOSFET Transistor
TOSHIBA
TO-247-4
4333
SiC MOSFET Through hole N channel 1200 V 20A (Tc) 107W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 36A (Tc) 170W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 40A (Tc) 182W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 100A (Tc) 431W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 100A (Tc) 342W (Tc) TO-247-4L (X)
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