sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:SCTW40N120G2VAG
Data Manual:SCTW40N120G2VAG.pdf
Brand:ST
Particular Year:23+
Package:HiP247
Delivery Date:New original
Stock: 3000pcs
SCTW40N120G2VAG 1200V Automotive grade silicon carbide power MOSFET is developed using ST's advanced innovative 2nd / 3rd generation silicon carbide MOSFET technology. The device has low on-resistance per unit area and good switching performance. Applications include main inverters (electric traction), DC/DC converters for EV/HEV, and on-board chargers (OBCs).
Product Specifications:
FET type: N channel
Technology: SiCFET (Silicon carbide)
Drain-source voltage (Vdss) : 1200 V
Current at 25°C - Continuous Drain (Id) : 33A (Tc)
Drive voltage (Max Rds On, min Rds On) : 18V
On-resistance (Max.) at different ids and Vgs: 105 milliohm @ 20A, 18V
Vgs(th) (Max.) : 5V@1mA for different ids
Gate charge (Qg) at different Vgs (Max.) : 63 NC-@18 V
Vgs (Max) : +22V, -10V
Input capacitance (Ciss) at different Vds (Max.) : 1230 PF-@800 V
FET function: -
Power dissipation (Max.) : 290W (Tc)
Operating temperature: -55°C ~ 200°C (TJ)
Installation type: Through hole
Supplier device package: HiP247™
Package/housing: TO-247-3
Basic product number: SCTW40
Model
Brand
Package
Quantity
Describe
ON
TO-247-4
3000
Silicon Carbide (SiC) MOSFET – EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L
ST
HiP247-3
3000
1200 V Automotive grade Silicon Carbide Power MOSFET, 27 Mω, 56 A, HiP247
ON
TO-247-3
3000
Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, TO-247-3L
ON
TO-247-4
3000
Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L
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