sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:SCTH60N120G2-7
Data Manual:SCTH60N120G2-7.pdf
Brand:ST
Particular Year:23+
Package:H2PAK-7
Delivery Date:New original
Stock: 3000pcs
The SCTH60N120G2-7 1200V Silicon Carbide (SiC) MOSFETs feature 52mΩ (typical value) and 60A (rated value) in an H2PAK-7 package. The device has excellent switching performance and an extremely low on-resistance RDS(on) performance indicator per unit area, resulting in a more efficient and compact system. Applications include switching mode power supplies, DC/DC converters, and industrial motor control.
Product Specifications:
FET type: N channel
Technology: SiCFET (Silicon carbide)
Drain-source voltage (Vdss) : 1200 V
Current at 25°C - Continuous Drain (Id) : 60A (Tc)
Drive voltage (Max Rds On, min Rds On) : 18V
On-resistance (Max.) at different ids and Vgs: 52 milliohm @ 30A, 10V
Vgs(th) (Max.) : 5V@1mA for different ids
Gate charge (Qg) at different Vgs (Max.) : 94 NC-@18 V
Vgs (Max) : +22V, -10V
Input capacitance (Ciss) at different Vds (Max.) : 1969 PF-@800 V
FET function: -
Power dissipation (Max.) : 390W (Tc)
Operating temperature: -55°C ~ 175°C (TJ)
Mounting type: Surface mount type
Supplier device package: H2PAK-7
Package/housing: TO-263-8, D²Pak (7 leads + connectors), TO-263CA
Model
Brand
Package
Quantity
Describe
ON
TO-247-3
3000
650V, 25mohm, N-Channel - EliteSiC, Silicon Carbide (SiC) MOSFET Transistor
TOSHIBA
TO-247-4
4333
SiC MOSFET Through hole N channel 1200 V 20A (Tc) 107W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 36A (Tc) 170W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 40A (Tc) 182W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 100A (Tc) 431W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 100A (Tc) 342W (Tc) TO-247-4L (X)
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