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IMBG65R107M1HXTMA1 is 650V CoolSiC M1 SiC Trench Power Device, SMD Compact Package SiC MOSFETs.

Product Attributes Of IMBG65R107M1HXTMA1

FET Type: N-Channel

Technology: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss): 650 V

Current - Continuous Drain (Id) @ 25°C: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On): 18V

Rds On (Max) @ Id, Vgs: 141mOhm @ 8.9A, 18V

Vgs(th) (Max) @ Id: 5.7V @ 2.6mA

Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V

Vgs (Max): +23V, -5V

Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V

Power Dissipation (Max): 110W (Tc)

Operating Temperature: -55°C ~ 175°C (TJ)

Mounting Type: Surface Mount

Supplier Device Package: PG-TO263-7-12

Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Features Of IMBG65R107M1HXTMA1

Efficiency improvement

Unique combination of high performance, high reliability and ease of use

Ease of use and integration

Suitable for topologies with continuous hard commutation

Higher robustness and system reliability

Integrated Circuit Chip IMBG65R107M1HXTMA1 N-Channel 650V MOSFETs Transistors

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