sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide (SiC) MOSFET Transistor
Brand:ON
Particular Year:24+
Package:TO-247-3
Delivery Date:New and Original
Stock: 3000pcs
NVHL025N065SC1: 650V, 25mohm, N-Channel - EliteSiC, Silicon Carbide (SiC) MOSFET Transistor
Model: NVHL025N065SC1
Package: TO-247-3
Type: Silicon Carbide (SiC) MOSFET Transistor
Overview:
The NVHL025N065SC1 - EliteSiC MOSFETs feature a new technology that provides superior switching performance and higher reliability compared to silicon. In addition, low on-resistance and compact die size ensure low capacitance and gate charge. As a result, system benefits include highest efficiency, faster operating frequency, higher power density, lower EMI and smaller system size.
NVHL025N065SC1 - Product Specifications:
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain-Source Voltage (Vdss): 650 V
Current at 25°C - Continuous Drain (Id): 99A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
On Resistance (Max) at Different Id, Vgs: 28.5 mOhm @ 45A, 18V
Vgs(th) at different Id (max): 4.3V @ 15.5mA
Gate Charge (Qg) at Vgs (max): 164 nC @ 18 V
Vgs (max): +22V, -8V
Input capacitance (Ciss) at different Vds (max): 3480 pF @ 325 V
Power Dissipation (Max): 348W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package/Housing: TO-247-3
Model
Brand
Package
Quantity
Describe
ON
TO-247-3
3000
Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, TO-247-3L
ON
TO-247-4
3000
Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L
A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.
A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.
A: at present, our self-employed brands TI,ST,ADI,NXP,LATTICE,CYPRESS,INFINEON,XILINX and other first-line brands. Other channels are the original factory and agency channels. If necessary, we can communicate and confirm according to the specific brand and model.
A: You can inquire through the website, or by phone and email.
A: the delivery date is marked in most commodity information. You can estimate the delivery time of the commodity according to the delivery date. The specific arrival time depends on the warehouse where the commodity is located and the logistics mode you choose.
A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.
ON Semiconductor (Nasdaq: ON) is the premier supplier of high-performance silicon solutions for energy-efficient electronics. The companys product portfolio includes power and signal management, logic, discrete and custom devices to help customers sol…
NXH020P120MNF1PG
NXH020P120MNF1PG is a SiC MOSFET module containing a 20 mohm 1200V SiC MOSFET half bridge and an NTC thermistor in an F1 module.Feature of NXH020P120MNF1PG20 m/1200 V SiC MOSFET Half BridgeThermistorOptions with Pre−applied Thermal Interface Material…FSBB10CH120DFL
The FSBB10CH120DFL is a Motion SPM 3 module that provides a full-featured, high-performance inverter output stage for AC direct induction, BLDC, and PMSM motors. The module integrates an optimized gate drive for the built-in IGBT to minimize EMI and l…AP0101AT2L00XPGA0-DR2
The AP0101AT2L00XPGA0-DR2 is a dedicated automotive image coprocessor that enables flexible camera platforms using megapixel high dynamic range (HDR) sensors from On Semiconductor.Dual-chip solutions for sensors and coprocessors enable multiple camera…NTHL032N065M3S
The NTHL032N065M3S is a 650V Silicon carbide (SiC) MOSFET. The new 650V M3S flat SiC MOSFET family is optimized for fast switching applications. The planar technology works reliably with a negative grid voltage drive and closes spikes on the grid. The…NTH4L032N065M3S
The NTH4L032N065M3S is an EliteSiC, 32 mohm, 650 V, M3S flat SiC MOSFET. The 650V Silicon Carbide (SiC) MOSFETs offer superior switching performance and increased reliability compared to silicon devices (Si). The 650V SiC MOSFETs feature low on-resist…NTBG032N065M3S
The NTBG032N065M3S is a new 650V M3S flat SiC MOSFET family optimized for fast switching applications. The planar technology works reliably with a negative grid voltage drive and closes spikes on the grid. The series performs best with an 18V gate dri…Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
CopyRight ©2022 Copyright belongs to Mingjiada Yue ICP Bei No. 05062024-12
Official QR Code
Links: