sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IMYH200R075M1H
Data Manual:IMYH200R075M1H.pdf
Brand:INFINEON
Particular Year:23+
Package:TO-247PLUS-4-HCC
Delivery Date:New and Original
Stock: 1000pcs
IMYH200R075M1H CoolSiC™ 2000 V 75 mΩ SiC MOSFETs in a TO-247PLUS-4-HCC package are designed to provide higher power density without compromising system reliability even under demanding high voltage and switching frequency conditions.The low power losses of CoolSiC™ technology provide higher reliability thanks to XT interconnect technology in a 2000 V optimised package, achieving maximum efficiency in applications such as string inverters, solar optimisers, electric vehicle charging and energy storage systems.
Product properties
FET Type: N-channel
Technology: SiC (silicon carbide junction transistor)
Drain source voltage (Vdss): 2000 V
Current at 25°C - continuous drain (Id): 34 A (Tc)
Drive voltage (max Rds On, min Rds On): 15V, 18V
On-resistance (max) at different Id, Vgs: 98 milliohms @ 13A, 18V
Vgs(th) for different Id (max): 5.5V @ 7.7mA
Gate charge (Qg) at different Vgs (max): 64 nC @ 18 V
Vgs (max): +20V, -7V
FET function: -
Power dissipation (max): 267W (Tc)
Operating temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4-U04
Package / Case: TO-247-4
Basic Part Number: IMYH200
Potential Applications
- String inverters
- Solar optimizers
- Electric vehicle charging
Model
Brand
Package
Quantity
Describe
INFINEON
TO-247-4
3000
1200V 7mΩ CoolSiC™ Trench Silicon Carbide MOSFET in TO247-4 Package
INFINEON
TO-247-3
2000
Through-hole N-channel 650 V 26A (Tc) 96W (Tc) PG-TO247-3-41
INFINEON
TO-247-3
1000
1200V 14mΩ CoolSiC™ trench-type silicon carbide MOSFETs in TO247-3 package
INFINEON
TO-247PLUS-4-HCC
1000
1200 V CoolSiC™ trench-type silicon carbide MOSFETs in TO247-4 package
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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