sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IMZ120R350M1H
Data Manual:IMZ120R350M1H.pdf
Brand:INFINEON
Particular Year:23+
Package:TO-247-4
Delivery Date:New and Original
Stock: 1000pcs
The IMZ120R350M1H is a 1200 V, 350 mΩ CoolSiC™ SiC MOSFET in a TO247-4 package, based on an advanced trench semiconductor process that is optimised for both performance and reliability. Compared to conventional silicon (Si)-based switches such as IGBTs and MOSFETs, SiC MOSFETs offer many advantages such as the lowest gate charge and device capacitance levels of any 1200 V class switch, no reverse recovery losses in commutator resistant diodes, low switching losses independent of temperature and no threshold conduction characteristics. As a result, CoolSiC™ MOSFETs are ideally suited for hard-switching and resonant switching topologies such as power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.
Feature Description
Best-in-class switching and conduction losses
Baseline high threshold voltage, Vth > 4 V
0 V turn-off gate voltage for simple and easy gate drive
Wide range of gate source voltages
Low loss and robust body diode for hard commutation
Switch-off losses are temperature independent
Drive source pins for optimised switching performance
Advantages
Highest efficiency
Reduced cooling effort
Increased operating frequency
Increased power density
Reduced system complexity
Model
Brand
Package
Quantity
Describe
INFINEON
TO-247-4
3000
1200V 7mΩ CoolSiC™ Trench Silicon Carbide MOSFET in TO247-4 Package
INFINEON
TO-247-3
2000
Through-hole N-channel 650 V 26A (Tc) 96W (Tc) PG-TO247-3-41
INFINEON
TO-247-3
1000
1200V 14mΩ CoolSiC™ trench-type silicon carbide MOSFETs in TO247-3 package
INFINEON
TO-247PLUS-4-HCC
1000
1200 V CoolSiC™ trench-type silicon carbide MOSFETs in TO247-4 package
INFINEON
TO-247PLUS-4-HCC
1000
1200 V CoolSiC™ trench-type silicon carbide MOSFETs in TO247-4 package
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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