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The IMBG120R060M1H is a 1200 V, 60 mΩ CoolSiC™ SiC MOSFET in a D2PAK-7L (TO-263-7) package, based on an advanced trench process that is optimised for both performance and reliability. Available in a modified 1200 V SMD package, it combines the low power consumption characteristics of CoolSiC technology with .XT interconnect technology to achieve maximum efficiency and passive cooling in applications such as motor drives, charging modules and industrial power supplies.

Feature Description

Extremely low switching losses

Short-circuit capability: 3 µs

Fully controllable dV/dt

Gate threshold voltage typical: VGS(th) = 4.5 V

Excellent anti-parasitic on-state capability, capable of 0 V shutdown

Robust body diode for hard switching

.XT interconnect technology for best-in-class thermal performance

Package creepage distance and electrical clearance > 6.1 mm

Sense pins for optimised switching performance

IMBG120R060M1H Product Properties

Product Type: MOSFET

Technology: SiC

Mounting Style: SMD/SMT

Package / Case: PG-TO263-7

Transistor Polarity: N-Channel

Number of Channels: 1 Channel

Vds - Drain-source breakdown voltage: 1.2 kV

Id-Continuous drain current: 36 A

Rds On - drain-source on-resistance: 83 mOhms

Vgs - Gate-source voltage: - 7 V, + 23 V

Vgs th - gate source threshold voltage: 5.7 V

Qg - gate charge: 34 nC

Min. operating temperature: - 55 C

Max. operating temperature: + 175 C

Pd-Power dissipation: 181 W

Channel mode: Enhancement

Brand name: CoolSiC

Series: Trench/Fieldstop IGBT4 - E4

Configuration: Single

Descent time: 9.8 ns

Forward Transconductance - Min: 7 S

Product type: MOSFET

Rise time: 4.8 ns

Factory Pack Quantity: 1000

Sub Category: MOSFETs

Typical Off Delay Time: 20 ns

Typical Turn-On Delay: 8.9 ns

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