sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IMBF170R450M1
Data Manual:IMBF170R650M1.pdf
Brand:INFINEON
Particular Year:23+
Package:TO-263-7
Delivery Date:New and Original
Stock: 3000pcs
The IMBF170R650M1 CoolSiC™ 1700 V, 650 mΩ SiC MOSFET features TO-263-7 for increased creepage distance and is optimized for flyback topologies for accessing auxiliary power supplies with DC bus voltages from 600 V to 1000 V in a wide range of power applications.
Description of features
Optimised for flyback topologies
Extremely low switching losses
Compatible with flyback controllers with 12 V / 0 V gate source voltage
Fully controllable dV/dt, optimised for EMI
SMD (surface mount) package with increased creepage distance and electrical clearance (> 7 mm)
Benefits
1700 V SiC MOSFETs enable a simple and efficient single-ended flyback topology for auxiliary power supplies
SMD (surface mount) package allows for easy integration directly into the PCB, enabling natural convection cooling and eliminating the need for additional heat sinks
Reduced isolation effort due to increased creepage distance and electrical clearance of the package
Reduced system complexity
High power density
Application areas
Energy storage systems
Electric vehicle fast charging
Power supplies
Industrial motor drives and controls
Solar system solutions
Model
Brand
Package
Quantity
Describe
INFINEON
TO-247-4
3000
1200V, 60mΩ, CoolSiC™ Silicon Carbide MOSFET Transistor, TO-247-4
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