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GS-065-014-6-LR-MR is an enhancement mode GaN-on-Si power transistor with high current, high voltage breakdown and high switching frequency characteristics. This GaN system innovation uses industry-leading technologies such as the patented Island Technology® cell layout to achieve high-current bare core and high yield.

The GS-065-014-6-LR-MR power transistors are available in bottom-cooled PDFN packages. These power transistors have very low case thermal resistance, making them ideal for demanding high-power applications.

GS-065-014-6-LR-MR Product Attributes:

Manufacturer: Infineon

Product Category: GaN Field Effect Transistors

Mounting Style: SMD/SMT

Package / Case: PDFN-8

Transistor Polarity: N-Channel

Number of Channels: 1 Channel

Vds-Drain-Source Breakdown Voltage: 700 V

Id-Continuous drain current: 15.2 A

Rds On-drain on-resistance: 38 mOhms

Vgs - gate-source voltage: - 10 V, + 7 V

Vgs th-Gate-source threshold voltage: 2.6 V

Qg - gate charge: 2.7 nC

Minimum operating temperature: - 55 C

Maximum operating temperature: + 150 C

Channel mode: Enhancement

Configuration: Single

Fall-off time: 5 ns

Maximum operating frequency: > 1 MHz

Minimum operating frequency: 0 Hz

Rise time: 5 ns

Technology: GaN-on-Si

Typical turn-off delay time: 6 ns

Typical turn-on delay time: 5 ns

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