sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:GaN HEMTs – Gallium Nitride Transistors
Brand:INFINEON
Particular Year:24+
Package:PG-TSON-6
Delivery Date:New and original
Stock: 3000pcs
The IGC019S06S1 is a 60 V normally closed enhanced power transistor in a small PQFN 3x5 package for high power density design. Due to its extremely low on-resistance, it is ideal for achieving reliable performance in demanding high voltage and high current applications.
Application of IGC019S06S1:
Battery powered tool
Low power SMPS
Telecommunications and data centers
Electric cars, electric bikes, drones
Robots and drones
Solar and energy storage systems
Characteristics of IGC019S06S1:
Super fast switching and high efficiency
Space-saving and highly robust package
No reverse recovery costs
Ultra-low grid charge and output charge
Bare chip for excellent top heat dissipation
Humidity level MSL1
Industrial grade 3x5 package
Model
Brand
Package
Quantity
Describe
INFINEON
WLCSP-16
3000
GaN HEMT-Gallium nitride transistor bidirectional switch 40 V G3, 6 mΩ
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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