sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:GaN HEMTs – Gallium Nitride Transistors
Brand:INFINEON
Particular Year:24+
Package:PG-TSON-4
Delivery Date:New and original
Stock: 3000pcs
The IGB110S10S1 is a 100 V normally closed enhanced power transistor in a small PQFN 3x3 package for high power density design. Due to its low on-resistance, it is ideal for achieving reliable performance in demanding high voltage and high current applications.
Features:
100 V enhanced power transistor
Double cooled package
No reverse recovery costs
Anti-wizard pass ability
Low grid charge, low output charge
Meets JEDEC standards
Applications:
• Telecom AC/DC synchronous rectifier
• Telecom DC/DC synchronous rectifier
• Robot
• Battery powered tools
• Electric cars, drones
• Wireless charging
• Class D audio
Model
Brand
Package
Quantity
Describe
INFINEON
WLCSP-16
3000
GaN HEMT-Gallium nitride transistor bidirectional switch 40 V G3, 6 mΩ
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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