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The GS-065-011-6-LR-MR is an enhancement-mode GaN-on-Si power transistor with properties that allow for high current, high voltage breakdown, and high switching frequency.

Housed in the bottom-side cooled PDFN package, it offers very low junction-to-case thermal resistance, making it ideal for demanding high-power applications. These features combined ensure very high efficiency in power switching.

Features

700 V e-mode power transistor

850 V transient drain-to-source voltage

Bottom-cooled, 8x8 mm PDFN package

RDS(on) = 125 mΩ

IDSmax,DC = 12.2 A / IDSmax,Pulse = 20 A

Ultralow FOM

Gate drive requirements (0 V to 6 V)

High switching frequency (> 1 MHz)

Fast, controllable fall and rise times

Reverse conduction capability

Zero reverse recovery loss

Product Properties

FET Type: N-Channel  

Technology: GaNFET (Gallium Nitride)  

Drain-Source Voltage (Vdss): 700 V  

Current at 25°C - Continuous Drain (Id): 12.2A (Tc)  

Drive Voltage (Max Rds On, Min Rds On): 6V  

On-resistance (max) at different Id, Vgs: 180 mOhm @ 3.2A, 6V  

Vgs(th) at different Id (max): 2.6V @ 2.4mA  

Gate Charge (Qg) at Vgs (max): 2.2 nC @ 6 V  

Vgs (max): +7V, -10V  

Input capacitance (Ciss) at different Vds (max): 70 pF @ 400 V  

Operating Temperature: -55°C ~ 150°C (TJ)  

Mounting Type: Surface Mount  

Supplier Device Package: 8-PDFN (8x8)  

Package/Shell: 8-VDFN Exposed Pad 

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