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The GS-065-011-1-L-TR is an enhanced GaN on silicon power transistor. The GaN characteristics allow high current, high voltage breakdown and high switching frequency. The GS-065-011-1-L-TR is a bottom-cooled transistor in a 5x6 mm PDFN package that achieves the ideal power dissipation required for modern USB-C adapters and chargers or other medium power applications.

GS-065-011-1-L-TR Product Specifications

Manufacturer: Infineon

Product Category: GaN Field Effect Transistors

Mounting Style: SMD/SMT

Transistor Polarity: N-Channel

Number of Channels: 1 Channel

Vds-Drain-source breakdown voltage: 650 V

Id-Continuous drain current: 11 A

Rds On-drain on-resistance: 150 mOhms

Vgs - gate-source voltage: - 10 V, + 7 V

Vgs th-Gate-source threshold voltage: 1.5 V

Qg - gate charge: 2 nC

Minimum operating temperature: - 40 C

Maximum operating temperature: + 150 C

Channel mode: Enhancement

Configuration: Single

Maximum operating frequency: > 1 MHz

Minimum operating frequency: 0 Hz

Humidity sensitivity: Yes

Series: GS-065

Technology: GaN-on-Si

Transistor type: E-Mode

Application Areas

AC-DC

USB Power

USB PD Adapter

Chargers

Industrial

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