sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:GaN FET
Brand:TI
Particular Year:24+
Package:VQFN-38
Delivery Date:New and Original
Stock: 3000pcs
LMG3624REQR - 650V 170mΩ GaN FET with integrated driver, protection and current sensing
LMG3624REQR - Product Description:
LMG3624REQR is a 650V 170mΩ GaN power FET intended for switch-mode power-supply applications. The LMG3624 simplifies design and reduces component count by integrating the GaN FET and gate driver in a 8mm by 5.3mm QFN package. The LMG3624 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times.
LMG3624REQR - Key Features:
650V 170mΩ GaN power FET
Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control
Current-sense emulation with high bandwidth and high accuracy
Cycle-by-cycle overcurrent protection
Overtemperature protection with FLT pin reporting
AUX quiescent current: 240µA
AUX standby quiescent current: 50µA
Maximum supply and input logic pin voltage: 26V
8mm × 5.3mm QFN package with thermal pad
Model
Brand
Package
Quantity
Describe
TI
VQFN-52
3000
650V 30mΩ GaN FET with integrated driver, protection and zero voltage detection
TI
VQFN-54
3000
600V 30mΩ GaN FETs with integrated driver, protection and zero voltage detection
Nexperia
CCPAK1212i
3000
Gallium nitride (GaN) FET Surface mount N-channel 650 V 58.5A (Tc) 250W (Tc) CCPAK1212i
Nexperia
CCPAK1212
3000
Gallium nitride (GaN) FET surface mount N-channel 650 V 60A (Tc) 300W (Tc) CCPAK1212
Nexperia
WLCSP-22
3000
Gallium nitride (GaN) FET Surface Mount N Channel 40 V 20A (Ta) 13W (Ta) 22-WLCSP (2.1x2.1)
Nexperia
VQFN-7
3000
Gallium nitride (GaN) FET Surface mount N-channel 150 V 100A (Ta) 65W (Ta) VQFN
TI
54-VQFN
2000
600V 30mΩ GaN FET with integrated driver, protection and zero-voltage detection
TI
WQFN-16
2000
100V 4.4mΩ half-bridge GaN FET with integrated driver and protection
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