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The IMWH170R650M1 device is a 1700 V, 650 mΩ discrete CoolSiC MOSFET in TO-247-3 HCC package for single-ended flyback auxiliary power supplies connected TO DC link voltages from 600 V to 1000 V for a variety of power conversion applications. Key features include direct drive by flyback controller without the need for a gate driver IC. XT interconnect technology provides excellent thermal performance, and high creepage distance packaging increases reliability.

Specifications

Technology: SiC

Installation style: Through Hole

Package/housing: TO-247-3

Transistor polarity: N-Channel

Number of channels: 1 Channel

Vds- drain-source breakdown voltage: 1.7kV

Id- Continuous drain current: 7.5A

Rds On- drain-source on-resistance: 580 mOhms

Vgs - grid - source voltage: -10 V, + 20 V

Vgs TH-gate source threshold voltage: 5.7V

Qg- Grid charge: 8.1 nC

Minimum operating temperature: -55 °C

Maximum operating temperature: + 175°C

Pd- Power dissipation: 88 W

Channel mode: Enhancement

Brand name: CoolSiC

Series: 1700V SiC

Package: Tube

Trademark: Infineon Technologies

Configuration: Single

Descent time: 22 ns

Forward transconductance - Minimum value: 0.65S

Product type: MOSFET

Rise time: 11 ns

Factory packing quantity: 240

Subcategory: MOSFETs

Transistor type: 1 N-Channel

Typical shutdown delay: 22 ns

Typical connection delay: 18 ns

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