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sales@hkmjd.com
sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:MOSFET Transistors
Brand:IXYS
Particular Year:24+
Package:TO-252-3
Delivery Date:New and Original
Stock: 3000pcs
IXTY2P50PA - 500V P-Channel Enhancement Mode PolarP™ MOSFET Transistors
Product Attributes
Technology: Si
Mounting Style: SMD/SMT
Package / Case: DPAK-3 (TO-252-3)
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 500 V
Id - Continuous Drain Current: 2 A
Rds On - Drain-Source Resistance: 4.2 Ohms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 4.5 V
Qg - Gate Charge: 11.9 nC
Pd - Power Dissipation: 58 W
Channel Mode: Enhancement
IXTY2P50PA - Pinout Diagram (TO-252)
Features and Benefits:
AEC Q101 Qualified
Avalanche Rated
Rugged PolarPTM Process
Low Package Inductance
Easy to Mount
Space Savings
Applications:
High-side Switches
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
Model
Brand
Package
Quantity
Describe
Wolfspeed
TO-247-3
2000
650V, 60mΩ, 37A Silicon Carbide Power MOSFET Transistors TO-247-3
Wolfspeed
TO-247-4
2000
650V, 60mΩ, 37A Silicon Carbide Power MOSFET Transistors TO-247-4
Wolfspeed
TO-247-3
2000
650V, 45mΩ, 49A Silicon Carbide Power MOSFET Transistors TO-247-3
Wolfspeed
TO-263-7
2000
650V, 45mΩ, 47A, Silicon Carbide Power MOSFET Transistors TO-263-7
Wolfspeed
TO-263-7
2000
1200V, 40mΩ, 64A, Silicon Carbide Power MOSFET Transistors TO-263-7
Wolfspeed
TO-247-4
2000
1200V, 40mΩ, 66A, Silicon Carbide Power MOSFET Transistors TO-247-4
Wolfspeed
TO-247-4
2000
1200V, 40mΩ, 57A, Silicon Carbide Power MOSFET Transistors TO-247-4
Wolfspeed
TO-263-7
2000
1200V, 40mΩ, 63A, Silicon Carbide Power MOSFET Transistors TO-263-7
Wolfspeed
TO-263-7
2000
650V, 25mΩ, 80A Silicon Carbide Power MOSFET Transistors TO-263-7
Wolfspeed
TO-247-4
2000
650V, 25mΩ, 97A Discrete Silicon Carbide Power MOSFET Transistor, TO-247-4
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A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.
IXYS is headquartered in Silicon Valley, USA. It was established in 1983. Main business: MOSFET, IGBT, Thyristor, SCR, rectifier bridge, diode, DCB block, power module, Hybrid, transistor, inverter, RF module and microcontrollers, etc.The business is…
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E-mail:sales@hkmjd.com
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