sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Half-Bridge GaN FET
Brand:TI
Particular Year:24+
Package:WQFN-16
Delivery Date:New and Original
Stock: 2000pcs
LMG2100R044RARR device is a 90V continuous, 100V pulsed, 35A half-bridge power stage, with integrated gate-driver and enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 100V GaN FETs driven by one high-frequency 90V GaN FET driver in a half-bridge configuration.
Feature
Integrated 4.4mΩ half-bridge GaN FETs and driver
90V continuous, 100V pulsed voltage rating
Package optimized for easy PCB layout
High slew rate switching with low ringing
5V external bias power supply
Supports 3.3V and 5V input logic levels
Gate driver capable of up to 10MHz switching
Excellent propagation delay (33ns typical) and matching (2ns typical)
Internal bootstrap supply voltage clamping to prevent GaN FET Overdrive
Supply rail undervoltage for lockout protection
Low power consumption
Exposed top QFN package for top-side cooling
Large GND pad for bottom-side cooling
Applications
Buck, boost, buck-boost converters
LLC converters
Solar inverters
Telecom and server power
Motor drives
Power tools
Class-D audio amplifiers
Model
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Texas Instruments (TI), abbreviated as TI, is the worlds leading semiconductor company providing innovative digital signal processing (DSP) and analog device technologies for real-world signal processing. In addition to the semiconductor business, it …
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