sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:STGW30NC60WD
Brand:ST
Particular Year:24+
Package:TO-247-3
Delivery Date:New and Orignal
Stock: 1000pcs
The STGW30NC60WD IGBTs use the advanced Power MESH process to achieve an excellent trade-off between switching performance and low conductivity.
Product Characteristics
Voltage - Collector Breakdown (max): 600 В
Current - Collector (Ic) (max): 60 A
Current - collector pulse (Icm): 150 A
Vce (on), Ic (max) at different Vge: 2.5 V at 15 V, 20 A
Power - max: 200 W
Switching energy 305 µJ (on), 181 µJ (off)
Input type: standard
Gate charge 102 nK
Td value at 25°C (on/off): 29.5 msec/118 msec
Test Conditions 390 V, 20 A, 10 ohms, 15 V
Reverse Recovery Time (trr): 40 ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package/Housing: TO-247-3
Supplier Device Package: TO-247-3
Applications
● High-frequency motor control, inverters, UPSs
● High-frequency motor control, inverters, UPS, HF, SMPS, and PFC in hard-switching and resonant topologies
● Resonant topologies
Model
Brand
Package
Quantity
Describe
ROHM
TO-247-3
1000
IGBT with fluted cut-off field 1200 V 50 A 395 W through-hole TO-247N
INFINEON
TO-247-4
1000
IGBT Grooved Field Cutoff 650 V 74 A 250 W Through Hole PG-TO247-4-3
ROHM
TO-247-3
1000
IGBT Trench Type Field Cutoff 650 V 96 A 254 W Through Hole TO-247N
INFINEON
PG-TO247-3
1000
IGBT Grooved field cut-off 650 V 80 A 333 W Through-hole PG-TO247-3
ROHM
TO-3PFM
1000
IGBT Trench Type Field Cutoff 650 V 45 A 94 W Through Hole TO-3PFM
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This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure.Contact Number:86-755-83294757
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