sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:STGF15M65DF2
Brand:ST
Particular Year:24+
Package:TO-220FP
Delivery Date:New and Orignal
Stock: 1000pcs
STGF15M65DF2 STMicroelectronics 650V M series trench gate field terminated IGBTs are high-speed IGBTs featuring an advanced, patented trench gate and field terminated structure.The 650V M series offers 3A-150A maximum collector currents and is suitable for applications with operating frequencies up to 100kHz. They have an optimised design and can be customised as embedded reverse shunt diodes.
Product Characteristics
IGBT Type: In-Channel Field Cutoff
Voltage - Collector Breakdown (max): 650 В
Current - Collector (Ic) (max): 30 A 30 A
Current - collector pulse (Icm): 60 A
Vce(on) at varying Vge, Ic (max): 2V @ 15V, 15A
Power - Max: 31 W
Switching Energy: 90 µJ (on), 450 µJ (off)
Input Type: Standard
Gate charge 45 nK
Td value at 25°C (on/off): 24ns/93ns
Test Conditions 400V, 15A, 12 ohms, 15V
Reverse Recovery Time (trr): 142 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package/Housing: Full TO-220-3 package
Package: TO-220FP
Applications
● Motor control
● UPS
● PFC
● General-purpose inverters
Model
Brand
Package
Quantity
Describe
ROHM
TO-247-3
1000
IGBT with fluted cut-off field 1200 V 50 A 395 W through-hole TO-247N
INFINEON
TO-247-4
1000
IGBT Grooved Field Cutoff 650 V 74 A 250 W Through Hole PG-TO247-4-3
ROHM
TO-247-3
1000
IGBT Trench Type Field Cutoff 650 V 96 A 254 W Through Hole TO-247N
INFINEON
PG-TO247-3
1000
IGBT Grooved field cut-off 650 V 80 A 333 W Through-hole PG-TO247-3
ROHM
TO-3PFM
1000
IGBT Trench Type Field Cutoff 650 V 45 A 94 W Through Hole TO-3PFM
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The STMicroelectronics (ST) Group was established in 1987 by the merger of Italys SGS Microelectronics and Frances Thomson Semiconductor. In May 1998, SGS-THOMSON Microelectronics changed the company name to STMicroelectronics Limited. STMicroelectron…
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