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The LMG341xR070 GaN power stages feature integrated drivers and protection features, allowing designers to achieve higher levels of power density and efficiency in power electronics systems. The inherent advantages of the LMG341x over silicon MOSFETs include ultra-low input and output capacitance values, zero reverse recovery that reduces switching losses by 80%, and low switch node ringing that reduces EMI. These advantages enable dense and efficient topologies such as totem-pole PFC.

The LMG341xR070 provides an alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify designs, maximize reliability and optimize the performance of any power supply. Integrated gate driver supports 100V/ns switching (nearly zero Vds ringing), sub-100ns current limit protects itself against accidental shoot-through events, thermal shutdown prevents thermal runaway, and system interface signals provide self-monitoring .

Feature

• TI GaN process passes accelerated testing for real-world hard-switching mission profile reliability

• Supports high-density power conversion designs

Superior system performance compared to cascode or standalone GaN FETs

Low-inductance 8mm x 8mm QFN package simplifies design and layout

Adjustable drive strength ensures switching performance and EMI control

Digital fault status output signal

Only +12V unregulated power supply required

• Integrated gate driver

Zero common source inductance

20ns propagation delay ensures MHz-level operation

Process-tuned gate bias voltage ensures reliability

User-Adjustable Slew Rate from 25 to 100V/ns

• Strong protection

No external protection components required

Overcurrent protection, response time less than 100ns

Slew rate immunity better than 150V/ns

Transient Overvoltage Immunity

Overheating protection

UVLO protection for all power rails

• Device Options:

LMG3410R070: Latching Overcurrent Protection

LMG3411R070: Cycle-by-cycle overcurrent protection、

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