sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:NRVBAF1540T3G
Brand:ON
Particular Year:23+
Package:DO-221AC
Delivery Date:New and original
Stock: 1000pcs
The NRVBAF1540T3G (1.5 A, 40 V) device uses the Schottky barrier principle in a large area metal-silicon power diode. The state-of-the-art geometry has an epitaxial structure with oxide passivation and metal-covered contact. Ideal for low voltage, high frequency rectification, or as a continuous current and polarity protection diode in surface mount applications where compact size and weight are critical to the system.
Product attribute
Diode configuration: 1 self-contained
Technology: Schottky
Voltage - DC reverse (Vr) (Max) : 40 V
Current - Average rectification (Io) (per diode) : 1.5A
Voltage - forward (Vf) under different If: 460 mV@1.5A
Speed: Fast recovery =< 500ns, > 200mA (Io)
Current - reverse leakage at different Vr: 800µA @ 40V
Operating temperature - junction: -55°C ~ 150°C
Class: Automobile class
Qualification: AEC-Q101
Mounting type: Surface mount type
Package/Housing: DO-221AC, SMA flat lead
Supplier device package: SMA-FL
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