sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:CoolSiC™ Schottky Diodes
Brand:INFINEON
Particular Year:25+
Package:PG-TO247-3
Delivery Date:New and Original
Stock: 5000pcs
The IDW20G120C5B is a CoolSiC™ Schottky diode Generation 5 1200 V, 20 A in a TO-247-3 package, the leading technology for SiC Schottky barrier diodes. The thin wafer technology already used in the G2 is combined with a merged pn junction to improve the diode's inrush current capability. This series offers market-leading efficiency and improved system reliability at an attractive cost point.
IDW20G120C5B Product Attributes
Product Category: Silicon Carbide Schottky Diodes
Mounting Style: Through Hole
Package / Case: TO-247-3
Configuration: Bi-Anode Common Cathode
If - Forward Current: 20 A
Vrrm - Repetitive reverse voltage: 1.2 kV
Vf - Forward voltage: 1.4 V
Ifsm - Forward inrush current: 190 A
Ir - Reverse current: 12 uA
Minimum operating temperature: - 55 C
Maximum operating temperature: + 175 C
Characteristics
Best-in-class forward voltage (VF)
No reverse recovery charge
Mild forward voltage (VF) temperature dependence
Best-in-class surge current capability
Excellent thermal performance
The Benefits
Highest system efficiency
Improved system efficiency at low switching frequencies
Increased power density at high switching frequencies
Higher system reliability
Reduced electromagnetic interference
Applications
Single-phase string inverter solutions
Electric vehicle charging
Motor Control
Photovoltaics
Uninterruptible Power Supply (UPS)
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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