sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Schottky Diode
Brand:INFINEON
Particular Year:25+
Package:PG-TO263-2
Delivery Date:New and Original
Stock: 2000pcs
The AIDK16S65C5 is a 5th generation CoolSiC™ automotive Schottky diode representing Infineon's leading technology in the field of Silicon Carbide Schottky Barrier Diodes. Thanks to its compact design and thin wafer-based technology, the series offers improved efficiency under all load conditions, thanks to its thermal characteristics and low power consumption (Qc x Vf). The product family is designed to complement Infineon's IGBT and CoolMOS™ product portfolio. This ensures that the most demanding applications in the 650V voltage class are met.
AIDK16S65C5 Features
- Revolutionary semiconductor material - silicon carbide
- Benchmark switching performance
- No reverse recovery/no forward recovery
- Temperature independent switching behaviour
- High inrush current capability
- Lead-free plating; RoHS compliant
- Junction temperature range of -40°C to 175°C
- Higher system efficiency than silicon diodes
- Reduced cooling requirements, resulting in system cost/size savings
- Enables higher frequency/higher power density solutions
- Lower operating temperatures result in higher system reliability
- Reduced EMI
AIDK16S65C5 Specifications
Technology: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (max): 650 V
Current - Average Rectification (Io): 16A
Voltage - Forward (Vf): 1.7 V @ 16 A at different If's
Speed: No Recovery Time > 500mA (Io)
Reverse recovery time (trr): 0 ns
Current - reverse leakage at different Vr: 90 µA @ 650 V
Capacitance at different Vr, F: 483pF @ 1V, 1MHz
Grade: Automotive grade
Qualification: AEC-Q101
Mounting Type: Surface Mount
Package/Housing: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -40°C ~ 175°C
AIDK16S65C5 Potential Applications
- Boosters/DCDC converters
- On-board chargers/PFCs
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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