sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Schottky Diode
Brand:INFINEON
Particular Year:25+
Package:PG-TO263-2
Delivery Date:New and Original
Stock: 2000pcs
The AIDK16S65C5 is a 5th generation CoolSiC™ automotive Schottky diode representing Infineon's leading technology in the field of Silicon Carbide Schottky Barrier Diodes. Thanks to its compact design and thin wafer-based technology, the series offers improved efficiency under all load conditions, thanks to its thermal characteristics and low power consumption (Qc x Vf). The product family is designed to complement Infineon's IGBT and CoolMOS™ product portfolio. This ensures that the most demanding applications in the 650V voltage class are met.
AIDK16S65C5 Features
- Revolutionary semiconductor material - silicon carbide
- Benchmark switching performance
- No reverse recovery/no forward recovery
- Temperature independent switching behaviour
- High inrush current capability
- Lead-free plating; RoHS compliant
- Junction temperature range of -40°C to 175°C
- Higher system efficiency than silicon diodes
- Reduced cooling requirements, resulting in system cost/size savings
- Enables higher frequency/higher power density solutions
- Lower operating temperatures result in higher system reliability
- Reduced EMI
AIDK16S65C5 Specifications
Technology: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (max): 650 V
Current - Average Rectification (Io): 16A
Voltage - Forward (Vf): 1.7 V @ 16 A at different If's
Speed: No Recovery Time > 500mA (Io)
Reverse recovery time (trr): 0 ns
Current - reverse leakage at different Vr: 90 µA @ 650 V
Capacitance at different Vr, F: 483pF @ 1V, 1MHz
Grade: Automotive grade
Qualification: AEC-Q101
Mounting Type: Surface Mount
Package/Housing: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -40°C ~ 175°C
AIDK16S65C5 Potential Applications
- Boosters/DCDC converters
- On-board chargers/PFCs
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