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STPSC2H12B2Y Schottky silicon carbide diodes are power Schottky diodes with ultra-high performance. The diode is fabricated on a silicon carbide substrate. The device's wide bandgap material allows the design of a Schottky diode structure with a 1200V rating. Thanks to the Schottky structure, there is no indication of recovery during shutdown and the ringing pattern is negligible. Even the slightest capacitive shutdown characteristics are not affected by temperature.

Product Properties

Technology: SiC (Silicon Carbide) Schottky

Voltage - DC Reverse (Vr) (max): 1200 V

Current - Average Rectification (Io): 5A

Voltage - Forward (Vf) at Different If: 1.5 V @ 2 A

Speed: Fast Recovery = < 500ns, > 200mA (Io)

Current - reverse leakage at different Vr: 12 µA @ 1200 V

Capacitance at varying Vr, F: 190 pF @ 0 V, 1 MHz

Mounting Type: Surface Mount

Package/Shell: TO-252-3, DPAK (2 Leads + Tab), SC-63

Supplier Device Package: DPAK

Operating Temperature - Junction: -40°C ~ 175°C

Applications

● Bootstrap function of silicon carbide MOS-FETs

● Buffer diodes

● Switching diodes

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